SI7120DN(2005) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SI7120DN Datasheet PDF : 5 Pages
| |||
Si7120DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
Single Pulse Power, Juncion-To-Ambient
50
0.2
ID = 250 mA
40
−0.0
30
−0.2
−0.4
20
−0.6
10
−0.8
−1.0
−50.0 −25.0 0.0 25.0 50.0 75.0 100.0 125.0 150.0
TJ − Temperature (_C)
0
0.01
0.1
1
10
Time (sec)
100
600
Safe Operating Area
100
*Limited by rDS(on)
IDM Limited
10
P(t) = 0.0001
1
ID(on)
Limited
P(t) = 0.001
P(t) = 0.01
2
1
Duty Cycle = 0.5
0.1
TA = 25_C
Single Pulse
P(t) = 0.1
P(t) = 1
P(t) = 10
0.01
dc
BVDSS Limited
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 65_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72771
S-51128—Rev. D, 13-Jun-05
|
|
Share Link: 