SI7120DN(2005) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SI7120DN Datasheet PDF : 5 Pages
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Si7120DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
3000.0
Capacitance
0.08
0.06
0.04
0.02
VGS = 4.5 V
0.00
0.0
VGS = 10 V
5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0
ID − Drain Current (A)
Gate Charge
10.0
VDS = 10 V
8.0
ID = 10 A
6.0
4.0
2.0
0.0
0.0
6.0
12.0
18.0
24.0
30.0
Qg − Total Gate Charge (nC)
2500.0
Ciss
2000.0
1500.0
1000.0
500.0
Coss
Crss
0.0
0.0
10.0 20.0 30.0 40.0 50.0 60.0
VDS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
1.8
VGS = 10 V
ID = 10 A
1.6
1.4
1.2
1.0
0.8
0.6
−50 −25 0
25 50 75 100 125 150
TJ − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
40
On-Resistance vs. Gate-to-Source Voltage
0.10
TJ = 150_C
10
0.08
0.06
ID = 10 A
0.04
TJ = 25_C
0.02
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD − Source-to-Drain Voltage (V)
Document Number: 72771
S-51128—Rev. D, 13-Jun-05
0.00
0.0
2.0
4.0
6.0
8.0
10.0
VGS − Gate-to-Source Voltage (V)
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