BUK101-50GS View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BUK101-50GS Datasheet PDF : 11 Pages
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Philips Semiconductors
PowerMOS transistor
TOPFET
Product specification
BUK101-50GS
RDS(ON) / mOhm
VIS / V = 4
5
100
BUK101-50GS
6
7 8 9 10 11
50
0
0
20
40
60
80
100
ID / A
Fig.8. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VIS; tp = 250 µs
ID / A
100
BUK101-50GS
50
a
1.5
Normalised RDS(ON) = f(Tj)
1.0
0.5
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.11. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 13 A; VIS = 10 V
td sc / ms
100
BUK101-50GS
10
PDSM
1
0
0
2
4
6
8
10
12
VIS / V
Fig.9. Typical transfer characteristics, Tj = 25 ˚C.
ID = f(VIS) ; conditions: VDS = 10 V; tp = 250 µs
gfs / S
20
BUK101-50GS
15
10
5
0
0
20
40
60
80
100
ID / A
Fig.10. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 10 V; tp = 250 µs
0.1
0.1
1
10
PDS / kW
Fig.12. Typical overload protection characteristics.
td sc = f(PDS); conditions: VIS ≥ 5 V; Tj = 25 ˚C.
PDSM%
120
100
80
60
40
20
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tmb / C
Fig.13. Normalised limiting overload dissipation.
PDSM% =100⋅PDSM/PDSM(25 ˚C) = f(Tmb)
January 1993
6
Rev 1.200
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