BUK101-50GS View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BUK101-50GS Datasheet PDF : 11 Pages
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Philips Semiconductors
PowerMOS transistor
TOPFET
Product specification
BUK101-50GS
120 PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.2. Normalised limiting power dissipation.
PD% = 100⋅PD/PD(25 ˚C) = f(Tmb)
ID%
120
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.3. Normalised continuous drain current.
ID% = 100⋅ID/ID(25 ˚C) = f(Tmb); conditions: VIS = 5 V
ID & IDM / A
1000
BUK101-50GS
Overload protection characteristics not shown
100
RDS(ON) = VDS/ID
tp =
10 us
100 us
10
DC
1 ms
10 ms
100 ms
1
1
10
100
VDS / V
Fig.4. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Zth / (K/W)
10
BUK101-50GS
D=
1
0.5
0.2
0.1
0.1 0.05
0.02
PD
tp
D=
tp
T
0
0.01
1E-07
1E-05
1E-03
t/s
T
t
1E-01
1E+01
Fig.5. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
ID / A
100
11
10
9
BUK101-50GS
VIS / V
8
7
50
6
5
4
3
2
0
0
4
8
12 16 20 24 28 32
VDS / V
Fig.6. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VIS; tp = 250 µs & tp < td sc
ID / A
100
BUK101-50GS
90
VIS = 10 V
80
70
8V
60
6V
50
40
4V
30
20
10
0
0
1
2
3
4
5
VDS / V
Fig.7. Typical on-state characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VIS; tp = 250 µs
January 1993
5
Rev 1.200
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