2SB1386-R View Datasheet(PDF) - Secos Corporation.
Part Name
Description
Manufacturer
2SB1386-R Datasheet PDF : 3 Pages
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Elektronische Bauelemente
2SB1386
-5A, -30V
PNP Silicon Low Frequency Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low VCE(sat)
Excellent DC current gain characteristics
Complements the 2SD2098
CLASSIFICATION OF hFE
Product-Rank 2SB1386-P
Range
82~180
Marking
BHP
2SB1386-Q
120~270
BHQ
2SB1386-R
180~390
BHR
SOT-89
4
123
A
E
C
B
F
G
H
J
D
K
L
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
LeaderSize
7’ inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
3.94 4.25
1.40 1.60
2.30 2.60
1.50 1.70
0.89
1.2
0
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Symbol
VCBO
VCEO
VEBO
IC
Collector Power Dissipation
PD
Junction & Storage Temperature
TJ, TSTG
Note:
(1) Single pulse, Pw=10ms.
(2) When mounted on a 40⋅40⋅0.7 mm ceramic board.
Ratings
-30
-20
-6
-5
-10
0.5
2
150, -55~150
Unit
V
V
V
A(DC)
A(Pulse) (1)
W (2)
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain *
Transition frequency
Output Capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
hFE
fT
COB
Min.
-30
-20
-6
-
-
-
82
-
-
Typ.
-
-
-
-
-
-
-
120
60
Max.
-
-
-
-0.5
-0.5
-1.0
390
-
-
Unit
Test Conditions
V IC=-50µA
V IC= -1mA
V IE= -50µA
μA VCB= -20V
μA VEB= -5V
V IC/IB= -4A/-0.1A
*
VCE= -2V, IC= -0.5A
*
MHz VCE= -6V, IE= -50mA, f=30MHz
pF VCB= -20V, IE=0, f=1MHz
∗Measured using pulse current.
http://www.SeCoSGmbH.com/
10-Dec-2010 Rev. B
Any changes of specification will not be informed individually.
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