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1N5533D View Datasheet(PDF) - Compensated Devices => Microsemi

Part Name
Description
Manufacturer
1N5533D
CDI-DIODE
Compensated Devices => Microsemi CDI-DIODE
1N5533D Datasheet PDF : 2 Pages
1 2
• 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV
PER MIL-PRF-19500/437
• LOW REVERSE LEAKAGE CHARACTERISTICS
• LOW NOISE CHARACTERISTICS
1N5518 thru 1N5546D
and
1N5518B-1 thru 1N5546B-1
• DOUBLE PLUG CONSTRUCTION
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Junction and Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500 mW @ +50°C
Power Derating: 4 mW / °C above +50°C
Forward Voltage @ 200mA: 1.1 volts maximum
ELECTRICAL CHARACTERISTICS @ 25°C
JEDEC
TYPE
NUMBER
(NOTE 1)
NOMINAL
ZENER
VOLTAGE
VZ@ 1ZT
(NOTE 2)
1N5518B
1N5519B
1N5520B
1N5521B
1N5522B
1N5523B
1N5524B
1N5525B
1N5526B
1N5527B
1N5528B
1N5529B
1N5530B
1N5531B
1N5532B
VOLTS
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10.0
11.0
12.0
ZENER
TEST
CURRENT
1ZT
MAX. ZENER
IMPEDANCE
B-C-D SUFFIX
ZZT @ 1ZT
(NOTE 3)
MAXIMUM REVERSE
LEAKAGE CURRENT
lR
(NOTE 4)
VR = VOLTS
mAdc
OHMS
NON & A- B-C-D-
µ Adc SUFFIX SUFFIX
20
26
20
24
20
22
20
18
10
22
5.0
0.90
1.0
3.0
0.90
1.0
1.0
0.90
1.0
3.0
1.0
1.5
2.0
1.5
2.0
5.0
26
3.0
30
1.0
30
1.0
30
1.0
35
2.0
2.0
2.5
2.0
3.0
3.5
1.0
4.5
5.0
1.0
5.5
6.2
0.5
6.0
6.8
1.0
40
1.0
45
1.0
60
1.0
80
1.0
90
0.5
6.5
7.5
0.1
7.0
8.2
0.05
8.0
9.1
0.05
9.0
9.9
0.05
9.5
10.8
1N5533B 13.0
1N5534B 14.0
1N5535B 15.0
1N5536B 16.0
1N5537B 17.0
1N5538B 18.0
1N5539B 19.0
1N5540B 20.0
1N5541B 22.0
1N5542B 24.0
1N5543B 25.0
1N5544B 28.0
1N5545B 30.0
1N5546B 33.0
1.0
90
1.0
100
1.0
100
1.0
100
1.0
100
1.0
100
1.0
100
1.0
100
1.0
100
1.0
100
1.0
100
1.0
100
1.0
100
1.0
100
0.01 10.5
11.7
0.01 11.5
12.6
0.01 12.5
13.5
0.01 13.0
14.4
0.01 14.0
15.3
0.01 15.0
16.2
0.01 16.0
17.1
0.01 17.0
18.0
0.01 18.0
19.8
0.01 20.0
21.6
0.01 21.0
22.4
0.01 23.0
25.2
0.01 24.0
27.0
0.01 28.0
29.7
B-C-D
SUFFIX
MAXIMUM
DC ZENER
CURRENT
1ZM
B-C-D SUFFIX
MAX. NOISE
DENSITY
@1Z=250µ A
ND
mAdc
115
105
98
88
81
75
68
61
56
51
46
42
38
35
32
29
27
25
24
22
21
20
19
17
16
15
14
13
12
µ V/ HZ
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
2.0
4.0
4.0
4.0
5.0
10
15
20
20
20
20
20
20
20
20
20
20
20
20
20
REGULATION
FACTOR
VZ
(NOTE 5)
LOW
VZ
CURRENT
1ZL
VOLTS
0.90
0.90
0.85
0.75
0.60
0.65
0.30
0.20
0.10
0.05
0.05
0.05
0.10
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.25
0.30
0.35
0.40
0.45
0.50
mAdc
2.0
2.0
2.0
2.0
1.0
0.25
0.25
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
NOTE 1
NOTE 2
NOTE 3
NOTE 4
NOTE 5
No Suffix type numbers are +20% with guaranteed limits for only VZ, lR, and VF. Units
with “A” suffix are +10% with guaranteed limits for VZ, lR, and VF. Units with guaranteed limits for
all six parameters are indicated by a “B” suffix for +5.0% units, “C” suffix for +2.0% and “D” suffix
for +1.0%.
Zener voltage is measured with the device junction in thermal equilibrium at an ambient
temperature of 25°C + 3°C.
Zener impedance is derived by superimposing on 1ZT A 60Hz rms a.c. current equal to 10% of 1ZT.
Reverse leakage currents are measured at VR as shown on the table.
VZ is the maximum difference between VZ at lZT and VZ at lZL measured with
the device junction in thermal equilibrium at the ambient temperature of +25°C +3°C.
FIGURE 1
DESIGN DATA
CASE: Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL: Copper clad steel.
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
250 ˚C/W maximum at L = .375 inch
THERMAL IMPEDANCE: (ZOJX): 35
˚C/W maximum
POLARITY: Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION: Any.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com E-mail: mail@cdi-diodes.com
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