IKB15N60T View Datasheet(PDF) - Unspecified

Part Name

Description

Manufacturer

IKB15N60T

Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Unspecified 

IKB15N60T

TRENCHSTOP™ Series

q

100K/W

D=0.5

0.2

0.1

1 0 -1K /W

R,(K/W)

0.13265

0.37007

0.30032

0.34701

R1

, (s)

5.67*10-2

1.558*10-2

2.147*10-3

2.724*10-4

R2

1 0 -2K /W

1µs

0.05

0.02

C1=1/R1 C2=2/R2

0.01

single pulse

10µs 100µs 1ms 10ms 100ms

tP, PULSE WIDTH

Figure 21. IGBT transient thermal

impedance

(D = tp / T)

100K/W D=0.5

1 0 -1K /W

0.2

R,(K/W)

0.1

0.06991

0.43036

0.53839

0.05 0.58718

0.23695

0.02

0.03700

R1

0.01

, (s)

1.11*10-1

2.552*10-2

3.914*10-3

4.92*10-4

7.19*10-5

7.4*10-6

R2

6.53*10-2

C1=1/R1 C2=2/R2

single pulse

1 0 -2K /W

1µs 10µs 100µs 1ms 10ms 100ms

tP, PULSE WIDTH

Figure 22. Diode transient thermal

impedance as a function of pulse

width

(D=tP/T)

200ns

160ns

TJ=175°C

120ns

80ns

40ns

TJ=25°C

0ns

400A/µs

600A/µs

800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery time as

a function of diode current slope

(VR=400V, IF=15A,

Dynamic test circuit in Figure E)

1.0µC

0.8µC

TJ=175°C

0.6µC

0.4µC

TJ=25°C

0.2µC

0.0µC

400A/µs

600A/µs

800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 24. Typical reverse recovery charge

as a function of diode current

slope

(VR = 400V, IF = 15A,

Dynamic test circuit in Figure E)

IFAG IPC TD VLS

9

Rev. 2.8 11.05.2015

Share Link: