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STB75NF75L View Datasheet(PDF) - STMicroelectronics

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STB75NF75L Datasheet PDF : 13 Pages
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STB75NF75L
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 75A, VGS = 0
ISD = 75A,
di/dt = 100A/µs,
VDD = 24V, TJ = 150°C
see Figure 16
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
75 A
300 A
1.3 V
120
ns
500
nC
9
A
5/13
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