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STB75NF75L View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STB75NF75L Datasheet PDF : 13 Pages
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Electrical characteristics
2
Electrical characteristics
STB75NF75L
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS= 0
75
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
1 µA
10 µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±15V
±100 nA
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250µA
1
2.5 V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 37.5A
VGS= 5V, ID= 37.5A
0.009 0.011
0.010 0.013
Table 5.
Symbol
Dynamic
Parameter
Test conditions
gfs (1) Forward transconductance VDS = 15V, ID = 37.5A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f = 1 MHz,
VGS = 0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 60V, ID = 75A
VGS = 5V
see Figure 15
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
120
S
4300
pF
660
pF
205
pF
75 90 nC
18
nC
31
nC
Table 6.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 40V, ID = 37.5A,
RG = 4.7Ω, VGS = 4.5V
see Figure 14
Min. Typ. Max. Unit
35
ns
155
ns
110
ns
60
ns
4/13
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