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P-TO251-3-1(2003) View Datasheet(PDF) - Infineon Technologies

Part Name
Description
Manufacturer
P-TO251-3-1
(Rev.:2003)
Infineon
Infineon Technologies Infineon
P-TO251-3-1 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
9 Typ. gate charge
VGS = f (QGate)
parameter: ID = 7.3 A pulsed
SPD07N60C3
16
V
Final data
SPD07N60C3
SPU07N60C3
10 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
10 2 SPD07N60C3
A
12
0.2 VDS max
10 0.8 VDS max
10 1
8
6
4
2
0
0 4 8 12 16 20 24 28 nC 34
QGate
10 0
10 -1
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
11 Typ. drain current slope
di/dt = f(RG), inductive load, Tj = 125°C
par.: VDS=380V, VGS=0/+13V, ID=7.3A
3000
A/µs
12 Typ. switching time
t = f (RG), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, ID=7.3 A
500
ns
400
350
2000
300
1500
250
td(off)
1000
di/dt(on)
500
di/dt(off)
200
150
td(on)
100
tf
tr
50
0
0
20
40
60
80 100 130
RG
Page 7
0
0
20
40
60
80 100 130
RG
2003-09-16
 

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