SI4104DY(2008) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SI4104DY Datasheet PDF : 4 Pages
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SPICE Device Model Si4104DY
Vishay Siliconix
SPECIFICATIONS
(T
J
=
25°C
UNLESS
OTHERWISE
NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS(th)
rDS(on)
gfs
V
SD
C
iss
C
oss
C
rss
V
DS
=
V,
GS
I
D
=
250
μA
VGS = 10 V, ID = 5 A
VDS = 15 V, ID = 5 A
I =2A
S
V = 50 V, V = 0 V, f = 1 MHz
DS
GS
Gate-Source Charge
Q
gs
Gate-Drain Charge
Q
gd
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V = 50 V, V = 10 V, I = 5 A
DS
GS
D
Simulated Measured
Data
Data
Unit
3.5
V
0.081
0.085
Ω
6
7
S
0.81
0.82
V
447
446
48
47
16
18
pF
8.3
8.5
3
3
2.5
2.5
www.vishay.com
2
Document Number: 68408
S-81872⎯Rev. A, 18-Aug-08
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