SEP8506
GaAs Infrared Emitting Diode
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL MIN TYP MAX UNITS
TEST CONDITIONS
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current
50 mA
Power Dissipation
100 mW [À]
Storage Temperature Range
-40¡C to 85¡C
Operating Temperature Range
-40¡C to 85¡C
Soldering Temperature (5 sec)
240¡C
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
0.78 mW/¡C.
SCHEMATIC
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changes in order to improve design and
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