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D06S60 View Datasheet(PDF) - Infineon Technologies

Part Name
Description
Manufacturer
D06S60
Infineon
Infineon Technologies Infineon
D06S60 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode
Revolutionary semiconductor
material - Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on
the switching behavior
Ideal diode for Power Factor
Correction up to 1200W1)
No forward recovery
SDP06S60
SDT06S60
thinQ!¥ SiC Schottky Diode
Product Summary
VRRM
600 V
Qc
21 nC
IF
6A
PG-TO220-2-2.
P-TO220
Type
SDP06S60
SDT06S60
Package
P-TO220-3
PG-TO220-2-2.
Ordering Code
Q67040-S4371
Q67040-S4446
Marking
D06S60
D06S60
Pin 1
n.c.
C
Pin 2
C
A
Pin 3
A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous forward current, TC=100°C
RMS forward current, f=50Hz
IF
IFRMS
Surge non repetitive forward current, sine halfwave IFSM
TC=25°C, tp=10ms
Repetitive peak forward current
IFRM
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
IFMAX
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms
Repetitive peak reverse voltage
³i2dt
VRRM
Surge peak reverse voltage
Power dissipation, TC=25°C
VRSM
Ptot
Operating and storage temperature
Tj , Tstg
Rev. 2.4
Page 1
Value
Unit
6
A
8.4
21.5
28
60
2.3
A²s
600
V
600
57.6
W
-55... +175
°C
2008-06-02
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