PEMH16 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PEMH16 Datasheet PDF : 9 Pages
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NXP Semiconductors
PEMH16; PUMH16
NPN/NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
VCBO
collector-base voltage
open emitter
-
VCEO
collector-emitter voltage open base
-
VEBO
emitter-base voltage
open collector
-
VI
input voltage
positive
-
negative
-
IO
output current
-
ICM
peak collector current
-
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT363
[1] -
SOT666
[1][2] -
Tstg
storage temperature
−65
Tj
junction temperature
-
Tamb
ambient temperature
−65
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT363
[1] -
SOT666
[1][2] -
Max Unit
50
V
50
V
7
V
+40
V
−7
V
100
mA
100
mA
200
mW
200
mW
+150 °C
150
°C
+150 °C
300
mW
300
mW
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
PEMH16_PUMH16_4
Product data sheet
Rev. 04 — 15 November 2009
© NXP B.V. 2009. All rights reserved.
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