T15M256B-85PI View Datasheet(PDF) - Taiwan Memory Technology
Part Name
Description
Manufacturer
T15M256B-85PI Datasheet PDF : 13 Pages
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tm TE
CH
T15M256B
DC CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply Voltage to Vss Potential
Inputs to Vss Potential
Power Dissipation
Storage Temperature
RATING
-0.5 to + 7V
-0.5 to Vcc +0.5
0.7
-60 to +150
UNIT
V
V
W
°C
RECOMMENDED OPERATING CONDITIONS
PARAMETER
Supply Voltage
Input Voltage, low
Input Voltage, high
Ambient Temperature
SYM
Vcc
VIL
VIH
TA
MIN
4.5
-0.3
2.2
0/-40
TYP
5
-
-
-
MAX
5.5
0.8
Vcc+0.3
+70/+85
UNIT
V
V
V
°C
TRUTH TABLE
CS
OE
WE
H
X
X
L
H
H
L
L
H
L
X
L
MODE
Not Selected
Output Disable
Read
Write
I/O1- I/O8
High-Z
High-Z
Data Out
Data In
Power
Standby
Active
Active
Active
OPERATING CHARACTERISTICS
(Vcc = 5V / ± 10%, Vss = 0V, Ta = 0 ~ +70 °C /-40 to 85°C)
PARAMETER
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power
Supply Current
Standby Power
Supply Current
SYM.
I LI
I LO
VOL
VOH
Icc
ISB
ISB1
TEST CONDITIONS
Vin=Vss to Vcc
VI/O=Vss to Vcc , CS =VIH or
OE = VIH or WE = VIL
IOL = + 2.1mA
IOH = - 1.0mA
CS =VIL, I/O=0mA
-50
Cycle = MIN.
-70
Duty = 100%
-85
-100
CS=VIH, Cycle=min, Duty=100%
CS ≥ Vcc-0.2V
MIN. TYP. MAX. UNIT
-
-
1 uA
-
-
1 uA
-
- 0.4 V
2.4 -
-
V
-
- 35 mA
-
- 30 mA
-
- 25 mA
-
- 20 mA
-
- 0.3 mA
-
- 10 uA
TM Technology Inc. reserves the right
P. 3
to change products or specifications without notice.
Publication Date: MAY. 2002
Revision:A
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