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5962D0151101TXC View Datasheet(PDF) - Aeroflex UTMC

Part Name
Description
Manufacturer
5962D0151101TXC
UTMC
Aeroflex UTMC UTMC
5962D0151101TXC Datasheet PDF : 14 Pages
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DQ0(0)
DQ1(0)
DQ2(0)
DQ3(0)
DQ4(0)
DQ5(0)
DQ6(0)
DQ7(0)
VSS
DQ0(1)
DQ1(1)
DQ2(1)
DQ3(1)
DQ4(1)
DQ5(1)
DQ6(1)
DQ7(1)
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60
11
59
12
58
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14
Top View
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53
18
52
19
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21
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45
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DQ0(2)
DQ1(2)
DQ2(2)
DQ3(2)
DQ4(2)
DQ5(2)
DQ6(2)
DQ7(2)
VSS
DQ0(3)
DQ1(3)
DQ2(3)
DQ3(3)
DQ4(3)
DQ5(3)
DQ6(3)
DQ7(3)
Figure 2. 25ns SRAM Pinout (68)
PIN NAMES
A(18:0) Address
DQn(7:0) Data Input/Output
En
Enable
Wn Write Enable
G Output Enable
VDD Power
VSS Ground
DEVICE OPERATION
The UT9Q512 has three control inputs called Enable 1 (En),
Write Enable (Wn), and Output Enable (G); 19 address inputs,
A(18:0); and eight bidirectional data lines, DQ(7:0). En Device
Enable controls device selection, active, and standby modes.
Asserting En enables the device, causes IDD to rise to its active
value, and decodes the 19 address inputs to select one of 524,288
words in the memory. Wn controls read and write operations.
During a read cycle, G must be asserted to enable the outputs.
Table 1. Device Operation Truth Table
G Wn En I/O Mode
X1
X
1
3-state
Mode
Standby
X
0
0
Data in
1
1
0
3-state
Write
Read2
0
1
0
Data out
Read
Notes:
1. “X” is defined as a “don’t care” condition.
2. Device active; outputs disabled.
READ CYCLE
A combination of Wn greater than VIH (min) and En less than
VIL (max) defines a read cycle. Read access time is measured
from the latter of Device Enable, Output Enable, or valid address
to valid data output.
SRAM Read Cycle 1, the Address Access in figure 3a, is
initiated by a change in address inputs while the chip is enabled
with G asserted and Wn deasserted. Valid data appears on data
outputs DQ(7:0) after the specified tAVQV is satisfied. Outputs
remain active throughout the entire cycle. As long as Device
Enable and Output Enable are active, the address inputs may
change at a rate equal to the minimum read cycle time (tAVAV).
SRAM read Cycle 2, the Chip Enable - Controlled Access in
figure 3b, is initiated by En going active while G remains
asserted, Wn remains deasserted, and the addresses remain
stable for the entire cycle. After the specified tETQV is satisfied,
the eight-bit word addressed by A(18:0) is accessed and appears
at the data outputs DQ(7:0).
SRAM read Cycle 3, the Output Enable - Controlled Access in
figure 3c, is initiated byG going active while En is asserted, Wn
is deasserted, and the addresses are stable. Read access time is
tGLQV unless tAVQV or tETQV have not been satisfied.
2
 

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