VDD
E1
DATA RETENTION MODE
4. 5V
VDR > 2.5V
tEFR
4.5V
tR
VDD =VDR
Figure 7. Low VDD Data Retention Waveform
DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation)
(1 Second Data retention Test)
SYMBOL
PARAMETER
VDR
VDD for data retention
IDDR 1,2
Data retention current (per byte)
tEFR 1,3
Chip deselect to data retention time
tR1 , 3
Operation recovery time
Notes:
1. En = VDD - .2V, all other inputs = V DR or VSS.
2. Data retention current (ID D R) Tc = 25oC.
3. Not guaranteed or tested.
4. VDR = T=-40 oC and 125 oC.
DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation)
(10 Second Data Retention Test, TC=-40oC and +125oC)
SYMBOL
PARAMETER
V DD 1
VDD for data retention
tEFR2, 3
Chip select to data retention time
tR2, 3
Operation recovery time
MINIMUM
2.5
--
0
tAVAV
MAXIMUM UNIT
--
V
5.0
mA
ns
Ns
MINIMUM
4.5
0
tAVAV
MAXIMUM UNIT
5.5
V
ns
ns
Notes:
1. Performed at VDD (min) and VDD (max).
2. En = VSS, all other inputs = V DR or V SS.
3. Not guaranteed or tested.
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