OM6508SA View Datasheet(PDF) - Omnirel Corp => IRF
Part Name
Description
Manufacturer
OM6508SA Datasheet PDF : 2 Pages
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INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC TO-254AA PACKAGE
OM6508SA
OM6509SA
500 Volt, 5 And 10 Amp, N-Channel IGBT
With a Soft Recovery Diode
In A Hermetic Metal Package
FEATURES
• Isolated Hermetic Metal Package
• High Input Impedance
• Low On-Voltage
• High Current Capability
• Fast Turn-Off
• Low Conductive Losses
• Available Screened To MIL-S-19500, TX, TXV And S Levels
• Free Wheeling Diode
• Ceramic Feedthroughs Available
DESCRIPTION
This power module includes an IGBT power transistor which features a high
impedance insulated gate and the low on-resistance characteristics of bipolar
transistor with a free wheeling diode connected across the emitter and collector.
These devices are ideally suited for motor drives, UPS converters, power supplies
and resonant power converters.
MAXIMUM RATINGS @ 25°C Unless Specified Otherwise
PART
IC (Cont.)
V(BR)CES
VCE (sat) (Typ.) Tf (Typ.)
qJC
PD
TJ
NUMBER @ 90°C, A
V
V
ns
°C/W
W
°C
OM6508SA
5
500
2.8
400
3.8
35
150
OM6509SA
10
500
2.8
400
3.0
42
150
SCHEMATIC
Collector
MECHANICAL OUTLINE
.545
.144 DIA.
.535
.050
.040
Gate
Emitter
.685
.665
.800
.790
123
C EG
PIN CONNECTION
Pin 1: Collector
Pin 2: Emitter
Pin 3: Gate
.045
.035
PACKAGE OPTIONS
.550
.510
.150 TYP.
.550
.530
.005
.150 TYP.
.260
.249
3.1
MOD PAK
Z-TAB
6 PIN SIP
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA.
IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
4 11 R2
Supersedes 2 07 R1
3.1 - 147
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