OM6504SC View Datasheet(PDF) - Omnirel Corp => IRF
Part Name
Description
Manufacturer
OM6504SC Datasheet PDF : 2 Pages
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INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC TO-257AA PACKAGE
OM6501ST
OM6502ST
500 Volt, 5 And 10 Amp, N-Channel IGBT
In A Hermetic Metal Package
FEATURES
• Isolated Hermetic Metal Package
• High Input Impedance
• Low On-Voltage
• High Current Capability
• Fast Turn-Off
• Low Conductive Losses
• Available Screened to MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
The IGBT power transistor features a high impedance insulated gate and a low
on-resistance characteristic of bipolar transistors. These devices are ideally suited
for motor drives, UPS converters, power supplies and resonant power converters.
MAXIMUM RATINGS @ 25°C Unless Specified Otherwise
PART
IC (Cont.)
V(BR)CES
VCE (sat) (Typ.)
Tf (Typ.)
qJC
PD
TJ
NUMBER @ 90°C, A
V
V
ns
°C/W
W
°C
OM6501ST
5
500
2.8
400
3.8
35
150
OM6502ST
10
500
2.8
400
3.0
42
150
SCHEMATIC MECHANICAL OUTLINE PACKAGE OPTIONS
Collector
Gate
Emitter
.200
.420
.190
.410
.045
.035
.665
.150
.645
.140
.537
1 2 3 .527
.430
C EG
.410
.038 MAX.
.750
.500
.005
MOD PAK
.035
.100 TYP.
.025
.120 TYP.
Pin 1: Collector
Pin 2: Emitter
Pin 3: Gate
6 PIN SIP
Note: IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
4 11 R2
Supersedes 2 07 R1
3.1 - 139
3.1
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