IXTY02N50D View Datasheet(PDF) - IXYS CORPORATION

Part Name

Description

Manufacturer

IXTY02N50D

High Voltage MOSFET N-Channel, Depletion Mode

IXYS CORPORATION 

High Voltage MOSFET IXTP 02N50D

IXTU 02N50D

N-Channel, Depletion Mode

IXTY 02N50D

Preliminary Data Sheet

VDSS =

ID25 =

= RDS(on)

500 V

200 mA

30 Ω

Symbol

VDSX

VDGX

VGS

VGSM

IDSS

IDM

PD

TJ

TJM

Tstg

TL

TISOL

Md

Weight

Test Conditions

TJ = 25°C to 150°C

TJ = 25°C to 150°C

Continuous

Transient

TC = 25°C; TJ = 25°C to 150°C

TC = 25°C, pulse width limited by TJ

TC = 25°C

TA = 25°C

1.6 mm (0.063 in.) from case for 10 s

Plastic case for 10 s (IXTU)

Mounting torque

TO-220

TO-220

TO-251

TO-252

Symbol

Test Conditions

(TJ = 25°C, unless otherwise specified)

VDSX

VGS(off)

VGS = -10 V, ID = 25 μA

VDS = 25V, ID = 25 μA

IGSS

VGS = ± 20 VDC, VDS = 0

IDSX(off)

VDS = VDSS, VGS = -10 V

TJ = 125°C

RDS(on)

VGS = 0 V, ID = 50 mA Note 1

ID(on)

VGS = 0 V, VDS = 25V Note 1

Maximum Ratings

500

500

± 20

± 30

200

800

25

1.1

-55 ... +150

150

-55 ... +150

300

300

1.3 / 10

4

0.8

0.8

V

V

V

V

mA

mA

W

W

°C

°C

°C

°C

°C

Nm/lb.

g

g

g

Characteristic Values

min. typ. max.

500

V

-2.5

-5 V

±100 nA

10 μA

250 μA

20

30 Ω

250

mA

TO-220 (IXTP)

GDS

TO-251 (IXTU)

D (TAB)

G

D

S

TO-252 (IXTY)

D (TAB)

G

S

D (TAB)

Pins: 1 - Gate 2 - Drain

3 - Source TAB - Drain

Features

z Normally ON mode

z Low RDS (on) HDMOSTM process

z Rugged polysilicon gate cell structure

z Fast switching speed

Applications

z Level shifting

z Triggers

z Solid state relays

z Current regulators

© 2006 IXYS All rights reserved

98861A (01/06)

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