SEMICONDUCTOR
TECHNICAL DATA
LOW CURRENT RECTIFICATION AND HIGH SPEED SWITCHING.
KDR735U
SCHOTTKY BARRIER TYPE DIODE
FEATURES
·Low Reverse Current : IR=0.1μA(Typ.)
·High Reliability.
·Small Package : USQ.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL RATING
Reverse Voltage
VR
30
Average Forward Current
IO*
200
Surge Current (10ms)
IFSM*
1
Power Dissipation
PD**
200
Junction Temperature
Tj
125
Storage Temperature Range
Tstg
-40~125
* Unit rating. Total rating=unit rating × 1.5
** Mounted on a glass epoxy circuit board of 20×20mm,
pad dimension of 4×4mm.
UNIT
V
mA
A
mW
℃
℃
M
1
2
N
E
BM
4D
DIM MILLIMETERS
A
2.00 +_ 0.20
B
1.25 +_ 0.15
C
0.90 +_ 0.10
3
D
0.3+0.10/-0.05
E
2.10+_ 0.20
H
0.15+0.1/-0.06
J
1.30
K
0.00 ~ 0.10
H
L
0.70
K
N
M
0.42
N
0.10 MIN
1. D1 ANODE
2. D2 ANODE
3. D2 CATHODE
4. D1 CATHODE
4
3
D1
D2
1
2
USQ
Marking
4
3
Type Name
R3
1
2
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
Forward Voltage
VF
Reverse Current
IR
TEST CONDITION
IF=200mA
VR=10V
MIN.
-
-
TYP.
-
-
MAX.
0.60
1.0
UNIT
V
μA
2008. 9. 8
Revision No : 1
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