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KDR735T View Datasheet(PDF) - KEC

Part Name
Description
Manufacturer
KDR735T Datasheet PDF : 2 Pages
1 2
SEMICONDUCTOR
TECHNICAL DATA
LOW CURRENT RECTIFICATION AND HIGH SPEED SWITCHING.
FEATURES
·Low Reverse Current : IR=0.1μA(Typ.)
·High Reliability.
·Small Package : TSQ.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Reverse Voltage
VR
30
Average Forward Current
IO*
200
Surge Current (10ms)
IFSM*
1
Power Dissipation
PD**
900
Junction Temperature
Tj
125
Storage Temperature Range
Tstg
-40125
* Unit rating. (Total rating = Unit rating × 1.5)
** Mounted on a glass epoxy circuit board of 20×20mm,
pad dimension of 4×4mm.
UNIT
V
mA
A
mW
KDR735T
SCHOTTKY BARRIER TYPE DIODE
E
B
1
4
2
3
DIM MILLIMETERS
A
2.9+_ 0.2
B
1.6+0.2/-0.1
C
0.70+_ 0.05
D
0.4+_ 0.1
E
2.8+0.2/-0.3
F
1.9+_ 0.2
G
0.16 +_ 0.05
H
0.00-0.10
I
0.25+0.3/-0.15
J
0.60 +_ 0.1
K
0.55 +_ 0.1
H
G
1. D1 ANODE
2. D2 ANODE
3. D2 CATHODE
4. D1 CATHODE
4
D1
1
3
D2
2
TSQ
Marking
4
3
Type Name
R3
1
2
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
VF
Reverse Current
IR
TEST CONDITION
IF=200mA
VR=10V
MIN.
-
-
TYP.
-
-
MAX.
0.60
1.0
UNIT
V
μA
2006. 2. 15
Revision No : 0
1/2
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