KDR367E View Datasheet(PDF) - KEC
Part Name
Description
Manufacturer
| KDR367E Datasheet PDF : 0 Pages | |||
SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Low Forward Voltage : VF(2)=0.23V (Typ.)
Small Package : ESC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
VRM
15
Reverse Voltage
VR
10
Maximum (Peak) Forward Current
IFM
200
Average Forward Current
IO
100
Surge Current (10ms)
IFSM
1
Power Dissipation
PD
150*
Junction Temperature
Tj
125
Storage Temperature Range
Tstg
-55 125
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
UNIT
V
V
mA
mA
A
mW
KDR367E
SCHOTTKY BARRIER TYPE DIODE
C
1
2
D
1. ANODE
2. CATHODE
E
F
DIM
A
B
C
D
E
F
MILLIMETERS
1.60 +_0.10
1.20 +_0.10
0.80 +_0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
ESC
Marking
Type Name
US
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
VF(1)
VF(2)
VF(3)
IR
Total Capacitance
CT
TEST CONDITION
IF=1mA
IF=5mA
IF=100mA
VR=10V
VR=0V, f=1MHz
MIN.
-
-
-
-
-
TYP.
0.18
0.23
0.35
-
20
MAX.
-
0.30
0.50
20
40
UNIT
V
A
pF
2003. 2. 25
Revision No : 1
1/2
|
|
Share Link: 