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1N5527AUR-1 View Datasheet(PDF) - Microsemi Corporation

Part Name
Description
Manufacturer
1N5527AUR-1 Datasheet PDF : 2 Pages
1 2
• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV
PER MIL-PRF-19500/437
• ZENER DIODE, 500mW
• LEADLESS PACKAGE FOR SURFACE MOUNT
• LOW REVERSE LEAKAGE CHARACTERISTICS
• METALLURGICALLY BONDED
1N5518BUR-1
thru
1N5546BUR-1
and
CDLL5518 thru CDLL5546D
MAXIMUM RATINGS
Junction and Storage Temperature: -65°C to +125°C
DC Power Dissipation: 500 mW @ TEC = +125°C
Power Derating: 10 mW / °C above TEC = +125°C
Forward Voltage @ 200mA: 1.1 volts maximum
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
CDI
TYPE
NUMBER
NOMINAL ZENER
ZENER
TEST
VOLTAGE CURRENT
MAX. ZENER
IMPEDANCE
B-C-D SUFFIX
MAXIMUM REVERSE
LEAKAGE CURRENT
B-C-D
SUFFIX
MAXIMUM
DC ZENER
(NOTE 1)
VZ@ 1ZT 1ZT
(NOTE 2)
ZZT @ 1ZT
(NOTE 3)
lR
(NOTE 4)
VR = VOLTS
1ZM
VOLTS
mA
NON & A- B-C-D-
OHMS
µ Adc
SUFFIX SUFFIX
mA
CDLL5518B 3.3
20
26
5.0
0.90
1.0
115
CDLL5519B 3.6
20
24
3.0
0.90
1.0
105
CDLL5520B 3.9
20
22
1.0
0.90
1.0
98
CDLL5521B 4.3
20
18
3.0
1.0
1.5
88
CDLL5522B 4.7
10
22
2.0
1.5
2.0
81
CDLL5523B 5.1
5.0
26
2.0
2.0
2.5
75
CDLL5524B 5.6
3.0
30
2.0
3.0
3.5
68
CDLL5525B 6.2
1.0
30
1.0
4.5
5.0
61
CDLL5526B 6.8
1.0
30
1.0
5.5
6.2
56
CDLL5527B 7.5
1.0
35
0.5
6.0
6.8
51
CDLL5528B 8.2
1.0
40
0.5
6.5
7.5
46
CDLL5529B 9.1
1.0
45
0.1
7.0
8.2
42
CDLL5530B 10.0
1.0
60
0.05
8.0
9.1
38
CDLL5531B 11.0
1.0
80
0.05
9.0
9.9
35
CDLL5532B 12.0
1.0
90
0.05
9.5
10.8
32
CDLL5533B 13.0
1.0
90
0.01
10.5
11.7
29
CDLL5534B 14.0
1.0
100
0.01
11.5
12.6
27
CDLL5535B 15.0
1.0
100
0.01
12.5
13.5
25
CDLL5536B 16.0
1.0
100
0.01
13.0
14.4
24
CDLL5537B 17.0
1.0
100
0.01
14.0
15.3
22
CDLL5538B 18.0
1.0
100
0.01
15.0
16.2
21
CDLL5539B 19.0
1.0
100
0.01
16.0
17.1
20
CDLL5540B 20.0
1.0
100
0.01
17.0
18.0
19
CDLL5541B 22.0
1.0
100
0.01
18.0
19.8
17
CDLL5542B 24.0
1.0
100
0.01
20.0
21.6
16
CDLL5543B 25.0
1.0
100
0.01
21.0
22.4
15
CDLL5544B 28.0
1.0
100
0.01
23.0
25.2
14
CDLL5545B 30.0
1.0
100
0.01
24.0
27.0
13
CDLL5546B 33.0
1.0
100
0.01
28.0
29.7
12
REGULATION
FACTOR
CURRENT
LOW
VZ
CURRENT
VZ
1ZL
(NOTE 5)
VOLTS
mA
0.90
2.0
0.90
2.0
0.85
2.0
0.75
2.0
0.60
1.0
0.65
0.25
0.30
0.25
0.20
0.01
0.10
0.01
0.05
0.01
0.05
0.01
0.05
0.01
0.10
0.01
0.20
0.01
0.20
0.01
0.20
0.01
0.20
0.01
0.20
0.01
0.20
0.01
0.20
0.01
0.20
0.01
0.20
0.01
0.20
0.01
0.25
0.01
0.30
0.01
0.35
0.01
0.40
0.01
0.45
0.01
0.50
0.01
NOTE 1
NOTE 2
NOTE 3
NOTE 4
NOTE 5
No Suffix type numbers are +20% with guaranteed limits for only VZ, lR, and VF.
Units with “A” suffix are +10% with guaranteed limits for VZ, lR, and VF. Units with
guaranteed limits for all six parameters are indicated by a “B” suffix for +5.0% units,
“C” suffix for+2.0% and “D” suffix for +1.0%.
Zener voltage is measured with the device junction in thermal equilibrium at an ambient
temperature of 25°C + 3°C.
Zener impedance is derived by superimposing on 1ZT A 60Hz rms a.c. current equal to
10% of1ZT.
Reverse leakage currents are measured at VR as shown on the table.
VZ is the maximum difference between VZ at lZT and VZ at lZL measured
with the device junction in thermal equilibrium.
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
D 1.60 1.70 0.063 0.067
F 0.41 0.55 0.016 0.022
G 3.30 3.70 .130 .146
G1 2.54 REF. .100 REF.
S
0.03 MIN. .001 MIN.
FIGURE 1
DESIGN DATA
CASE: DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
100 °C/W maximum at L = 0 inch
THERMAL IMPEDANCE: (ZOJX): 35
°C/W maximum
POLARITY: Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
143
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