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5962G9684503VYA View Datasheet(PDF) - Aeroflex UTMC

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Description
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5962G9684503VYA Datasheet PDF : 21 Pages
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DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*
(VDD = 5.0V ±10%; -55°C < TC < +125°C)
SYMBOL
PARAMETER
CONDITION
MIN
VIH
High-level input voltage
(CMOS)
0.7VDD
VI L
Low-level input voltage
(CMOS)
VOL Low-level output voltage
VOL Low-level output voltage
IOL = 8mA, VDD = 4.5V (TTL)
IOL = 200µA, VDD = 4.5V (CMOS)
VOH High-level output voltage
IOH = -4mA, VDD = 4.5V (TTL)
2.4
VOH
CIN1
CIO1
High-level output voltage
Input capacitance
Bidirectional I/O capacitance
IOH = -200µA, VDD = 4.5V (CMOS)
4.45
ƒ = 1MHz @ 0V
ƒ = 1MHz @ 0V
IIN
Input leakage current
VIN = VDD and VSS
-10
IOZ
Three-state output leakage current
VO = VDD and VSS
-10
VDD = 5.5V
G = 5.5V
IOS2,3 Short-circuit output current
VDD = 5.5V, VO = VDD
VDD = 5.5V, VO = 0V
-90
IDD(OP)4,5 Supply current operating (both ports)
@ 22.2MHz
CMOS inputs (IOUT = 0)
VDD = 5.5V
IDD(OP)4,6 Supply current operating (single port) CMOS inputs (IOUT = 0)
@ 22.2 MHz
VDD = 5.5V
IDD(OP)4,5 Supply current operating (both ports)
@ 18.2MHz
CMOS inputs (IOUT = 0)
VDD = 5.5V
IDD(OP)4,6 Supply current operating (single port) CMOS inputs (IOUT = 0)
@ 18.2 MHz
VDD = 5.5V
IDD(SB)4 Supply current standby
CMOS inputs (IOUT = 0)
CE = VDD - 0.5, VDD = 5.5V
Notes:
* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019.
1. Measured only for initial qualification and after process or design changes that could affect input/output capacitance.
2. Supplied as a design limit but not guaranteed or tested.
3. Not more than one output may be shorted at a time for maximum duration of one second.
4. VIH = 5.5V, V IL = 0V.
5. IDD (OP) derates at 6.4mA/MHz.
6. IDD (OP) derates at 3.4mA/MHz.
MAX
UNIT
V
0.3VDD
V
0.4
V
0.05
V
V
V
25
pF
25
pF
10
µA
10
µA
90
mA
mA
300
mA
150
mA
275
mA
138
mA
1
mA
6
 

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