DATA RETENTION CHARACTERISTICS (Pre-Radiation)
(TC = 25°C)
SYMBOL
PARAMETER
VDR
I
1
DDR
VDD for data retention
Data retention current
tEFR 1,2
tR1,2
Chip deselect to data retention time
Operation recovery time
Notes:
1. CE equals VDR, all other inputs equal VDR or VSS.
2. Guaranteed but not tested.
MINIMUM
2.5
--
0
tWC or tRC
MAXIMUM
VDD @
2.5V
--
400
UNIT
V
µA
ns
ns
DATA RETENTION MODE
VDR 2.5V
VDD
4.5V
4.5V
VIN < 1.5V CMOS
tEFR
CE
VDR
tR
Figure 6. Low VDD Data Retention Waveform
50pF
460 ohms
VDD/2
CMOS
VDD-0.5V
0.5V
< 5ns
Input Pulses
Notes:
1. 50pF including scope probe and test socket.
2. Measurement of data output occurs at the low to high or high to low transition mid-point
(CMOS input = VDD/2).
Figure 7. AC Test Loads and Input Waveforms
90%
10%
< 5ns
16