IKW15T120 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

IKW15T120

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

IKW15T120

^

TrenchStop Series

Dynamic Characteristic

Input capacitance

Ciss

VCE=25V,

-

Output capacitance

Coss

VGE=0V,

-

Reverse transfer capacitance

Crss

f=1MHz

-

Gate charge

QGate

VCC=960V, IC=15A

-

VGE=15V

Internal emitter inductance

LE

TO-247AC

-

measured 5mm (0.197 in.) from case

Short circuit collector current1)

IC(SC)

VGE=15V,tSC≤10µs

-

VCC = 600V,

Tj = 25°C

1100

100

50

85

-

90

- pF

-

-

- nC

13 nH

-A

Switching Characteristic, Inductive Load, at Tj=25 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time

Diode reverse recovery charge

Diode peak reverse recovery current

Diode peak rate of fall of reverse

recovery current during tb

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

trr

Qrr

Irrm

dirr/dt

Tj=25°C,

VCC=600V,IC=15A,

VGE=-15/15V,

RG=56Ω,

Lσ2)=180nH,

Cσ2)=39pF

Energy losses include

“tail” and diode

reverse recovery.

Tj=25°C,

VR=600V, IF=15A,

diF/dt=600A/µs

min.

-

-

-

-

-

-

-

-

-

-

-

Value

typ.

50

30

520

60

1.3

1.4

2.7

140

1.9

17

230

Unit

max.

- ns

-

-

-

- mJ

-

-

- ns

- µC

-A

- A/µs

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

2) Leakage inductance L σ an d Stray capacity Cσ due to dynamic test circuit in Figure E.

Power Semiconductors

3

Preliminary / Rev. 1 Jul-02

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