TrenchStop® Series
IKW08T120
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VCE=25V,
VGE=0V,
f=1MHz
-
600
- pF
-
36
-
-
28
-
Gate charge
QGate
VCC=960V, IC=8A
-
53
- nC
VGE=15V
Internal emitter inductance
LE
-
13
- nH
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC(SC)
VGE=15V,tSC≤10µs
-
48
-A
VCC = 600V,
Tj = 25°C
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t b
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=25°C,
VCC=600V,IC=8A,
VGE=0/15V,
RG=81Ω,
Lσ2)=180nH,
Cσ2)=39pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25°C,
VR=600V, IF=8A,
diF/dt=600A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
40
23
450
70
0.67
0.7
1.37
80
1.0
13
420
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/µs
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
4
Rev. 2.3 Sep 08