HM5259165B-75 View Datasheet(PDF) - Elpida Memory, Inc

Part Name

Description

Manufacturer

HM5259165B-75

512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword × 16-bit × 4-bank/16-Mword × 8-bit × 4-bank /32-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM

Elpida Memory, Inc 

HM5259165B/HM5259805B/HM5259405B-75/A6

DC Characteristics (Ta = 0 to +70˚C, VCC, VCCQ = 3.3 V ± 0.3 V, VSS, VSSQ = 0 V)

(HM5259165B)

HM5259165B

-75

-A6

Parameter

Symbol Min Max Min

Operating current

(CAS latency = 2)

(CAS latency = 3)

I CC1

—

220 —

I CC1

—

220 —

Standby current in power

I CC2P

—

6

—

down

Standby current in power

I CC2PS

—

4

—

down (input signal stable)

Standby current in non power ICC2N

—

40

—

down

Standby current in non power ICC2NS

—

18

—

down (input signal stable)

Active standby current in

I CC3P

—

8

—

power down

Active standby current in

I CC3PS

—

6

—

power down (input signal

stable)

Active standby current in non ICC3N

—

60

—

power down

Active standby current in non ICC3NS

—

30

—

power down (input signal

stable)

Burst operating current

(CAS latency = 2)

I CC4

—

200 —

(CAS latency = 3)

I CC4

—

270 —

Refresh current

I CC5

—

330 —

Self refresh current

I CC6

—

6

—

Input leakage current

I LI

Output leakage current

I LO

–1

1

–1

–1.5 1.5 –1.5

Output high voltage

Output low voltage

VOH

2.4 —

2.4

VOL

—

0.4 —

Max

190

190

6

4

40

18

8

6

60

30

200

200

330

6

1

1.5

—

0.4

Unit Test conditions

Burst length = 1

mA tRC = min

mA

mA CKE = VIL,

tCK = 12 ns

mA CKE = VIL, tCK = ∞

Notes

1, 2, 3

6

7

mA CKE, CS = VIH,

4

tCK = 12 ns

mA CKE = VIH, tCK = ∞ 9

mA CKE = VIL,

tCK = 12 ns

1, 2, 6

mA CKE = VIL, tCK = ∞ 2, 7

mA CKE, CS = VIH,

tCK = 12 ns

1, 2, 4

mA CKE = VIH, tCK = ∞ 2, 9

mA tCK = min, BL = 4

mA

mA tRC = min

mA VIH ≥ VCC – 0.2 V

VIL ≤ 0.2 V

µA 0 ≤ Vin ≤ VCC

µA 0 ≤ Vout ≤ VCC

DQ = disable

V

IOH = –4 mA

V

IOL = 4 mA

1, 2, 5

3

8

Data Sheet E0118H10

46

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