HM5259165B-75 View Datasheet(PDF) - Elpida Memory, Inc

Part Name

Description

Manufacturer

HM5259165B-75

512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword × 16-bit × 4-bank/16-Mword × 8-bit × 4-bank /32-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM

Elpida Memory, Inc 

HM5259165B/HM5259805B/HM5259405B-75/A6

Power up sequence

100 µs

VCC, VCCQ 0 V

CKE, DQM, Low

DQMU/DQML

CLK Low

CS, DQ Low

Power stabilize

Initialization sequence

200 µs

Absolute Maximum Ratings

Parameter

Voltage on any pin relative to VSS

Supply voltage relative to VSS

Short circuit output current

Power dissipation

Operating temperature

Storage temperature

Note: 1. Respect to VSS.

Symbol

VT

VCC

Iout

PT

Topr

Tstg

Value

Unit

–0.5 to VCC + 0.5 V

(≤ 4.6 (max))

–0.5 to +4.6

V

50

mA

1.2

W

0 to +70

°C

–55 to +125

°C

DC Operating Conditions (Ta = 0 to +70˚C)

Parameter

Symbol

Min

Max

Unit

Supply voltage

VCC, VCCQ

3.0

3.6

V

VSS, VSSQ

0

0

V

Input high voltage

VIH

2.0

VCC + 0.3

V

Input low voltage

VIL

–0.3

0.8

V

Notes: 1. All voltage referred to VSS.

2. The supply voltage with all VCC and VCCQ pins must be on the same level.

3. The supply voltage with all VSS and VSSQ pins must be on the same level.

4. VIH (max) = VCC + 2.0 V for pulse width ≤ 3 ns at VCC.

5. VIL (min) = VSS – 2.0 V for pulse width ≤ 3 ns at VSS.

Note

1

1

Notes

1, 2

3

1, 4

1, 5

Data Sheet E0118H10

41

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