HAL2830 View Datasheet(PDF) - Micronas

Part Name

Description

Manufacturer

HAL2830

Linear Hall-Effect Sensor Family with SENT Interface

Micronas 

HAL 283x

DATA SHEET

7. Application Notes

7.1. Ambient Temperature

Due to the internal power dissipation, the temperature

on the silicon chip (junction temperature TJ) is higher

than the temperature outside the package (ambient

temperature TA).

TJ = TA + T

At static conditions and continuous operation, the fol-

lowing equation applies:

T = ISUP  VSUP  RthJX + IDIO  VDIO  RthJX

For typical values, use the typical parameters. For

worst case calculation, use the max. parameters for

ISUP and Rth, and the max. value for VSUP from the

application. The choice of the relevant RthJX parameter

(Rthja, Rthjc, or Rthjs) depends on the way the device is

(thermally) coupled to its application environment.

For the HAL 283x, the junction temperature TJ is spec-

ified. The maximum ambient temperature TAmax can

be calculated as:

TAmax = TJmax – T

7.2. EMC and ESD

For applications that cause disturbances on the supply

line or radiated disturbances, a series resistor and a

capacitor are recommended. The series resistor and

the capacitor should be placed as closely as possible

to the Hall sensor.

Please contact Micronas for detailed investigation

reports with EMC and ESD results.

7.3. Application Circuit

Micronas recommends the following two application

circuits for the HAL 283x.

The external circuit mentioned in Fig. 7–1 is recom-

mended when VBAT  VPull-up. It is typically used when

the supply pin is directly connected with the battery

voltage and the DIO pin operates on a regulated power

supply.

Fig. 7–2 shows the recommended circuit according to

the SAE-J2716 2010-01. It can be used when VBAT =

VPull-up < 7 V. The Pull-up resistor RPull-up1 must be

placed close to the sensor to be compliant with the

SENT specification. For saving external components,

the resistors RPull-up1 and RPull-up2 could be combined

to RPull-up and placed close to the ECU. This might be

possible for some applications only and will not be

compliant with the SENT specification.

The electrical characteristics mentioned in Section 4.

(e.g. VSUP) has to be considered at the system setup.

They may reduce the operation range.

Values of external components:

CVSUP = 47 nF

CDIO = 180 pF

The maximum allowed load capacitor and the mini-

mum resistance can be calculated with the following

equation:

CL = CDIO + Cwire + CINPUT

RL = RPull-up

RL



-V----P---u---l-l-----u---p----m----a---x-----–-----V----D----I--O----L-----m----a--x---

IDIO – CL  V  tfall

CL



0---.--4---------V-----P---u---l-l-----u---p----m----i--n--

RL  V  trise

RPull-up = RPull-up1  RPull-up2

RPull-up:

CVSUP:

CDIO:

Cwire:

CINPUT:

VPull-up (max.):

VPull-up (min.):

VDIOL (max.):

IDIO:

V/trise:

V/tfall

Pull-up resistor between DIO and

VPull-up

Capacitance between the VSUP pin

and GND

EMC protection capacitance on the

DIO pin

Capacity of the wire

Input capacitance of the ECU

Max. applied Pull-up voltage, must be

lower than the value specified in

section 4.7.

Min. applied Pull-up voltage, must be

higher than the value specified in

section 4.7.

Max. DIO low voltage, it is

recommended to use the value

specified in section 4.8.

DIO current at VDIOL (max.)

Selected rising edge slew rate, the

max. value specified in section 4.8.

has to be used

: Selected falling edge slew rate, the

max. value specified in section 4.8.

has to be used

32

Jan. 18, 2016; DSH000165_002EN

Micronas

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