GA50TS120U View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

GA50TS120U

HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast™ Speed IGBT

International Rectifier 

"HALF-BRIDGE" IGBT INT-A-PAK

Features

• Generation 4 IGBT technology

• UltraFast: Optimized for high operating

frequencies 8-40 kHz in hard switching, >200

kHz in resonant mode

• Very low conduction and switching losses

• HEXFRED™ antiparallel diodes with ultra- soft

recovery

• Industry standard package

• UL approved

Benefits

• Increased operating efficiency

• Direct mounting to heatsink

• Performance optimized for power conversion: UPS,

SMPS, Welding

• Lower EMI, requires less snubbing

PD - 50064A

GA50TS120U

Ultra-FastTM Speed IGBT

VCES = 1200V

VCE(on) typ. = 2.4V

@VGE = 15V, IC = 50A

Absolute Maximum Ratings

VCES

IC @ TC = 25°C

ICM

ILM

IFM

VGE

VISOL

PD @ TC = 25°C

PD @ TC = 85°C

TJ

TSTG

Parameter

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current ➀

Peak Switching Current ➁

Peak Diode Forward Current

Gate-to-Emitter Voltage

RMS Isolation Voltage, Any Terminal To Case, t = 1 min

Maximum Power Dissipation

Maximum Power Dissipation

Operating Junction Temperature Range

Storage Temperature Range

Max.

1200

50

100

100

100

±20

2500

280

145

-40 to +150

-40 to +125

Units

V

A

V

W

°C

Thermal / Mechanical Characteristics

RθJC

RθJC

RθCS

Parameter

Thermal Resistance, Junction-to-Case - IGBT

Thermal Resistance, Junction-to-Case - Diode

Thermal Resistance, Case-to-Sink - Module

Mounting Torque, Case-to-Heatsink

Mounting Torque, Case-to-Terminal 1, 2 & 3 ➂

Weight of Module

www.irf.com

Typ.

—

—

0.1

—

—

200

Max.

0.44

0.70

—

4.0

3.0

—

Units

°C/W

N.m

g

1

4/24/2000

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