DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

G1126-02 View Datasheet(PDF) - Hamamatsu Photonics

Part Name
Description
Manufacturer
G1126-02
Hamamatsu
Hamamatsu Photonics Hamamatsu
G1126-02 Datasheet PDF : 4 Pages
1 2 3 4
GaAsP photodiode G1126-02, G1127-02, G2119
sShunt resistance vs. ambient temperature
10 T
(Typ. VR=10 mV)
1 T
100 G
10 G
G1126-02
G1127-02
1 G
100 M
G2119
10 M
-20
0
20
40
60
AMBIENT TEMPERATURE (˚C)
80
KGPDB0038EA
sShort circuit current linearity
(Typ. Ta=25 ˚C, A light source fully illuminated)
100
10-2
RL=100
10-4
10-6
10-8
10-10
10-12
10-14
DEPENDENT ON NEP
10-1160-16 10-14 10-12 10-10 10-8 10-6 10-4 10-2 100
INCIDENT LIGHT LEVEL (lx)
KGPDB0008EA
sDimensional outlines (unit: mm)
G1126-02
WINDOW
5.9 ± 0.1
9.1 ± 0.2
8.1 ± 0.1
G1127-02
WINDOW
10.5 ± 0.1
13.9 ± 0.2
12.35 ± 0.1
PHOTOSENSITIVE
SURFACE
0.45
LEAD
5.08 ± 0.2
PHOTOSENSITIVE
SURFACE
0.45
LEAD
7.5 ± 0.2
MARK ( 1.4)
CONNECTED
TO CASE
KGPDA0006EA
CONNECTED
TO CASE
KGPDA0007EA
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]