FS10VS-9A View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

FS10VS-9A

High-Speed Switching Use Nch Power MOS FET

Renesas Electronics 

FS10VS-9A

Electrical Characteristics

Parameter

Drain-source breakdown voltage

Gate-source breakdown voltage

Gate-source leakage current

Drain-source leakage current

Gate-source threshold voltage

Drain-source on-state resistance

Drain-source on-state voltage

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Source-drain voltage

Thermal resistance

Symbol

V(BR)DSS

V(BR)GSS

IGSS

IDSS

VGS(th)

rDS(ON)

VDS(ON)

| yfs |

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VSD

Rth(ch-c)

Min.

450

±30

—

—

2.5

—

—

5.4

—

—

—

—

—

—

—

—

—

Typ.

—

—

—

—

3.0

0.58

2.90

9.0

1100

120

25

20

30

140

40

1.5

—

Max.

—

—

±10

1.0

3.5

0.73

3.65

—

—

—

—

—

—

—

—

2.0

1.25

Unit

V

V

µA

mA

V

Ω

V

S

pF

pF

pF

ns

ns

ns

ns

V

°C/W

(Tch = 25°C)

Test conditions

ID = 1 mA, VGS = 0 V

IG = ±100 µA, VDS = 0 V

VGS = ±25 V, VDS = 0 V

VDS = 450 V, VGS = 0 V

ID = 1 mA, VDS = 10 V

ID = 5 A, VGS = 10 V

ID = 5 A, VGS = 10 V

ID = 5 A, VDS = 10 V

VDS = 25 V, VGS = 0 V,

f = 1MHz

VDD = 200 V, ID = 5 A,

VGS = 10 V,

RGEN = RGS = 50 Ω

IS = 5 A, VGS = 0 V

Channel to case

Rev.1.00, Aug.20.2004, page 2 of 6

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