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D10/CRCW0402-P View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
Manufacturer
D10/CRCW0402-P Datasheet PDF : 6 Pages
1 2 3 4 5 6
www.vishay.com
FUNCTIONAL PERFORMANCE
100
%
50
D/CRCW-P e3
Vishay
0
- 50
0
50 70
100 °C 150
Ambient Temperature in amb
TEST PROCEDURES AND REQUIREMENTS
IEC
EN 60115-160068-2
CLAUSE
TEST
METHOD
TEST
PROCEDURE
Stability for product types:
D/CRCW-P e3
4.5
-
Resistance
-
4.7
4.13
-
Voltage proof
U = 1.4 x Uins; 60 s
-
Short time overload
U = 2.5 x P70 x R 2 x Umax.;
duration acc. to style
4.17.2
58 (Td)
Solderability
Solder bath method;
Sn60Pb40
non-activated flux;
(235 ± 5) °C
(2 ± 0.2) s
Solder bath method;
Sn96.5Ag3Cu0.5
non-activated flux;
(245 ± 5) °C
(3 ± 0.3) s
4.8.4.2
-
Temperature
coefficient
(20/- 55/20) °C and
(20/125/20) °C
4.32
21 (Uu3)
Shear
(adhesion)
RR 1608 and smaller: 9 N
RR 2012 and larger: 45 N
4.33
21 (Uu1) Substrate bending
Depth 2 mm;
3 times
4.19
14 (Na)
Rapid change of
temperature
30 min at - 55 °C;
30 min at 125 °C
5 cycles
1000 cycles
REQUIREMENTS
PERMISSIBLE CHANGE (R)
STABILITY CLASS 1 OR BETTER
1 to 10 M
± 0.25 %; ± 0.5 %; ± 1 %
No flashover or breakdown
± (0.25 % R + 0.05 )
Good tinning (95 % covered)
no visible damage
Good tinning (95 % covered)
no visible damage
± 50 ppm/K; ± 100 ppm/K
No visible damage
No visible damage, no open circuit in bent position
± (0.25 % R + 0.05 )
± (0.25 % R + 0.05 )
± (1 % R + 0.05 )
Revision: 03-Apr-13
4
Document Number: 20036
For technical questions, contact: thickfilmchip@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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