BLW96 View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

BLW96

HF/VHF power transistor

Philips Electronics 

Philips Semiconductors

HF/VHF power transistor

Product specification

BLW96

DESCRIPTION

N-P-N silicon planar epitaxial

transistor intended for use in class-A,

AB and B operated high power

industrial and military transmitting

equipment in the h.f. and v.h.f. band.

The transistor presents excellent

performance as a linear amplifier in

s.s.b. applications. It is resistance

stabilized and is guaranteed to

withstand severe load mismatch

conditions. Transistors are supplied

in matched hFE groups.

The transistor has a 1⁄2" flange

envelope with a ceramic cap. All

leads are isolated from the flange.

QUICK REFERENCE DATA

R.F. performance up to Th = 25 °C

MODE OF

OPERATION

s.s.b. (class-AB)

c.w. (class-B)

s.s.b. (class-A)

VCE

f

PL

V

MHz

W

Gp

η

d3

d5

dB

%

dB

dB

50 1,6 − 28 25 − 200 (P.E.P.) > 13,5 > 40(1) < −30 < −30

50

108

200

typ. 6,5 typ. 67

−

−

40

28

50 (P.E.P.) typ. 19

−

typ. −40 < −40

IC(ZS)

(IC)

A

0,1

(6)

(4)

Note

1. ηdt at 200 W P.E.P.

PIN CONFIGURATION

handbook, halfpage 4

3

PINNING - SOT121B.

PIN

DESCRIPTION

1 collector

2 emitter

3 base

4 emitter

1

2

MLA876

Fig.1 Simplified outline. SOT121B.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely

safe provided that the BeO disc is not damaged.

August 1986

2

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