www.vishay.com
BAW76
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
IF = 100 mA
VF
VR = 50 V
IR
VR = 50 V, Tj = 150 °C
IR
IR = 5 μA, tp/T = 0.01,
tp = 0.3 ms
V(BR)
75
VR = 0 V, f = 1 MHz,
VHF = 50 mV
CD
1.7
IF = IR = 10 mA, iR = 1 mA
trr
IF = 10 mA, VR = 6 V,
iR = 1 mA, RL = 100 Ω
trr
MAX.
1
100
100
2
4
2
UNIT
V
nA
μA
V
pF
ns
ns
PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH)
Cathode Identification
26 min. [1.024]
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
94 9366
3.9 max. [0.154]
3.1 min. [0.120]
26 min. [1.024]
Rev. 1.8, 13-Jul-17
2
Document Number: 85551
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000