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5962F9763901VXC View Datasheet(PDF) - Intersil

Part Name
Description
Manufacturer
5962F9763901VXC Datasheet PDF : 2 Pages
1 2
ACS139MS
Die Characteristics
DIE DIMENSIONS:
Size: 2390µm x 2390µm (94 mils x 94 mils)
Thickness: 525µm ±25µm (20.6 mils ±1 mil)
Bond Pad: 110µm x 110µm (4.3 mils x 4.3 mils)
METALLIZATION:
Type: Al
Metal 1 Thickness: 0.7µm ±0.1µm
Metal 2 Thickness: 1.0µm ±0.1µm
SUBSTRATE:
Silicon on Sapphire (SOS)
Metallization Mask Layout
1A 0
SUBSTRATE POTENTIAL:
Unbiased Insulator
BACKSIDE FINISH:
Sapphire
PASSIVATION
Type: Phosphorous Silicon Glass (PSG)
Thickness: 1.30µm ±0.15µm
SPECIAL INSTRUCTIONS:
Bond VCC First
ADDITIONAL INFORMATION:
Worst Case Density: <2.0 x 105 A/cm2
Transistor Count: 190
ACS139MS.
1E
VCC
2E
1A1
2A0
1Y0
2A1
1Y1
2Y0
1Y2
2Y1
1Y3 GND
2Y3
2Y2
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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