Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Part Name
Description
2SK1296 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
2SK1296
Silicon N-Channel MOS FET
Hitachi -> Renesas Electronics
2SK1296 Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
2SK1296
Reverse Drain Current vs.
Source to Drain Voltage
50
Pulse Test
40
30
10 V
5V
20
10
V
GS
= 0, –5 V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0
D = 1
0.5
0.3
0.2
0.1
0.1
0.05
0.02
0.03
0.101Shot
Pulse
0.01
10
µ
100
µ
T
C
= 25°C
1m
10 m
Pulse Width PW (s)
θ
ch–c (t) =
γ
s (t) ·
θ
ch–c
θ
ch–c = 1.67°C/W, T
C
= 25°C
P
DM
TPW
D =
PTW
100 m
1
10
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]