INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2658
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; L= 25mH
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB=B 0.6A
ICBO
Collector Cutoff Current
VCB= 800V;IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 3A ; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V
Switching Times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC= 3A ;IB1= -IB2= 0.6A
MIN TYP. MAX UNIT
500
V
1.0
V
1.5
V
0.1 mA
0.1 mA
15
8
3
MHz
1
μs
3
μs
1
μs
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