2SA1725O View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SA1725O Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ; IB=B 0
VCEsat Collector-emitter saturation voltage IC=-2A ;IB=B -0.2A
ICBO
Collector cut-off current
VCB=-80V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
hFE
DC current gain
IC=-2A ; VCE=-4V
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
fT
Transition frequency
IE=0.5A ; VCE=-12V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-3.0A;IB1=-IB2=-0.3A
VCC=-30V ,RL=10Ω
hFE Classifications
O
P
Y
50-100 70-140 90-180
Product Specification
2SA1725
MIN TYP. MAX UNIT
-80
V
-0.5
V
-10 μA
-10 μA
50
180
150
pF
20
MHz
0.18
μs
1.10
μs
0.21
μs
2
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