SST29EE020 View Datasheet(PDF) - Silicon Storage Technology
Part Name
Description
Manufacturer
SST29EE020 Datasheet PDF : 26 Pages
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AC CHARACTERISTICS
2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
Data Sheet
TABLE 10: READ CYCLE TIMING PARAMETERS FOR SST29EE020
SST29EE020-120
SST29EE020-150
Symbol Parameter
Min
Max
Min
Max
Units
TRC
Read Cycle Time
120
150
ns
TCE
Chip Enable Access Time
120
150
ns
TAA
Address Access Time
120
150
ns
TOE
Output Enable Access Time
50
60
ns
TCLZ1
CE# Low to Active Output
0
0
ns
TOLZ1
OE# Low to Active Output
0
0
ns
TCHZ1
CE# High to High-Z Output
30
30
ns
TOHZ1
OE# High to High-Z Output
30
30
ns
TOH1
Output Hold from Address Change
0
0
ns
T10.4 307
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 11: READ CYCLE TIMING PARAMETERS FOR SST29LE020
SST29LE020-200
SST29LE020-250
Symbol Parameter
Min
Max
Min
Max
Units
TRC
Read Cycle Time
200
250
ns
TCE
Chip Enable Access Time
200
250
ns
TAA
Address Access Time
200
250
ns
TOE
TCLZ1
TOLZ1
TCHZ1
TOHZ1
TOH1
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
100
120
ns
0
0
ns
0
0
ns
50
50
ns
50
50
ns
0
0
ns
T11.1 307
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 12: READ CYCLE TIMING PARAMETERS FOR SST29VE020
SST29VE020-200
SST29VE020-250
Symbol Parameter
Min
Max
Min
Max
Units
TRC
Read Cycle Time
200
250
ns
TCE
Chip Enable Access Time
200
250
ns
TAA
Address Access Time
200
250
ns
TOE
TCLZ1
TOLZ1
TCHZ1
TOHZ1
TOH1
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
100
120
ns
0
0
ns
0
0
ns
50
50
ns
50
50
ns
0
0
ns
T12.1 307
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2001 Silicon Storage Technology, Inc.
10
S71062-06-000 6/01 307
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