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K07N120(2008) View Datasheet(PDF) - Infineon Technologies

Part Name
Description
Manufacturer
K07N120 Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
SKW07N120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
Unit
1
K/W
2.5
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
IGES
gfs
VGE=0V, IC=500µA
VGE = 15V, IC=8A
Tj=25°C
Tj=150°C
VGE=0V, IF=7A
Tj=25°C
Tj=150°C
IC=350µA,VCE=VGE
VCE=1200V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=8A
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=8A
VGE=15V
VGE=15V,tSC10µs
100VVCC1200V,
Tj 150°C
min.
1200
2.5
-
-
3
-
-
-
-
-
-
-
-
-
Value
typ.
-
3.1
3.7
2.0
1.75
4
-
-
-
6
720
90
40
70
13
75
Unit
max.
-V
3.6
4.3
2.4
5
µA
100
400
100 nA
-S
870 pF
110
50
90 nC
- nH
-A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev. 2_2 Sep 08
 

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