K75T60(2006) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
K75T60
(Rev.:2006)
(Rev.:2006)
Infineon Technologies
K75T60 Datasheet PDF : 13 Pages
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TrenchStop Series
IKW75N60T
q
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=25°C,
VCC=400V,IC=75A,
VGE=0/15V,
RG=5Ω,
Lσ1)=100nH,
Cσ1)=39pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25°C,
VR=400V, IF=75A,
diF/dt=1460A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
33
36
330
35
2.0
2.5
4.5
121
2.4
38.5
921
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/µs
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=175°C,
VCC=400V,IC=75A,
VGE=0/15V,
RG= 5Ω
Lσ1)=100nH,
Cσ1)=39pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=175°C
VR=400V, IF=75A,
diF/dt=1460A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
32
37
363
38
2.9
2.9
5.8
182
5.8
56.2
1013
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/µs
1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
3
Rev. 2.4 May 06
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