CM600E2Y-34H View Datasheet(PDF) - Powerex
Part Name
Description
Manufacturer
CM600E2Y-34H Datasheet PDF : 4 Pages
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HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM600E2Y-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
1200
Tj = 25°C
VGE = 12V
VGE = 14V
1000
VGE = 15V
VGE = 20V
800
VGE = 11V
VGE = 13V
VGE = 10V
600
400
VGE = 9V
200
VGE = 8V
VGE = 7V
0
0
2
4
6
8
10
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
1200
VCE = 10V
1000
800
600
400
200
Tj = 25°C
Tj = 125°C
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0 200 400 600 800 1000 1200
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
IC = 1200A
8
IC = 600A
6
4
2
IC = 240A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
104
7 Tj = 25°C
5
3
2
103
7
5
3
2
102
7
5
3
2
101
0
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE VS. VCE
(TYPICAL)
103
7 VGE = 0V, Tj = 25°C
5 Cies, Coes : f = 100kHz
3 Cres
2
: f = 1MHz
102
7
Cies
5
3
2
101
7
Coes
5
3
2
Cres
100
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
COLLECTOR-EMITTER VOLTAGE VCE (V)
Feb. 2000
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