AC CHARACTERISTICS WRITE CYCLE (Pre and Post-Radiation)*
(-55°C to +125°C for (C) screening and -40°C to +125°C for (W) screening, VDD1 = VDD1 (min), VDD2 = VDD2 (min))
SYMBOL
PARAMETER
8CR512-15
UNIT
MIN MAX
tAVAV1
Write cycle time
17
ns
tETWH
Device enable to end of write
12
ns
tAVET
Address setup time for write (EN- controlled)
0
ns
tAVWL
Address setup time for write (W - controlled)
0
ns
tWLWH
Write pulse width
12
ns
tWHAX
Address hold time for write (W - controlled)
2
ns
tEFAX
Address hold time for device enable (EN- controlled)
0
ns
tWLQZ2
W - controlled three-state time
5
ns
tWHQX2
W - controlled output enable time
4
ns
tETEF
Device enable pulse width (EN - controlled)
12
ns
tDVWH
Data setup time
7
ns
tWHDX
Data hold time
2
ns
tWLEF
Device enable controlled write pulse width
12
ns
tDVEF
Data setup time
7
ns
tEFDX
Data hold time
0
ns
tAVWH
Address valid to end of write
12
ns
tWHWL1
Write disable time
3
ns
Notes:
* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019.
1. Test with G high.
2. Three-state is defined as 200mV change from steady-state output voltage.
8