BR211SM-240 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BR211SM-240 Datasheet PDF : 6 Pages
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Philips Semiconductors
Breakover diodes
Preliminary specification
BR211SM series
20 ITSM / A
15
10
BR211
I
ITSM2
time
5
01
10
100
1000
10000
Number of impulses
Fig.3. Maximum permissible non-repetitive on-state
current based on sinusoidal currents; f = 50 Hz;
device triggered at the start of each pulse; Tj = 70˚C
prior to surge.
V(BR)(Tj)
1.06 V(BR)(25 C)
1.04
1.02
1.00
0.98
0.96
0.94
0.92
0.90
-40 -20 0 20 40 60 80 100
Tj / C
Fig.4. Normalised avalanche breakdown voltage V(BR)
and V(BO) as a function of temperature.
20 IT / A
Tj = 25 C
Tj = 150 C
15
10
typ
max
5
01
2
3
4
VT / V
Fig.5. On-state current as a function of on-state
voltage; tp = 200 µs to avoid excessive dissipation.
100 ID / uA
10
max
1
0.1
-40 -20 0
20 40 60 80 100
Tj / C
Fig.6. Maximum off-state current as a function of
temperature.
10 IS / A
1
max
typ
0.1
0.01
min
0.001
-50
0
50
100
150
Tj / C
Fig.7. Switching current as a function of junction
temperature.
10 IH / A
1
min
0.1
0.01
0.001
-50
0
50
100
150
Tj / C
Fig.8. Minimum holding current as a function of
temperature.
August 1996
3
Rev 1.100
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