1N5061-TAP View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
1N5061-TAP Datasheet PDF : 4 Pages
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1N5059, 1N5060, 1N5061,1N5062
Standard Avalanche Sinterglass Vishay Semiconductors
Diode
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
IF = 1 A
VF
-
IF = 2.5 A
VF
-
VR = VRRM
IR
-
VR = VRRM, Tj = 100 °C
IR
-
VR = VRRM, Tj = 150 °C
IR
-
1N5059
V(BR)R
225
IR = 100 μA
1N5060
V(BR)R
450
1N5061
V(BR)R
650
1N5062
V(BR)R
900
VR = 0 V, f = 1 MHz
CD
-
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
-
TYP.
-
-
-
-
-
-
-
-
-
40
-
MAX
1
1.15
1
10
100
1600
1600
1600
1600
-
4
UNIT
V
V
μA
μA
μA
V
V
V
V
pF
μs
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
200
VR = VRRM
160
RthJA =
45 K/W
1N5062
120
100 K/W
1N5061
160 K/W
80
1N5060
40
1N5059
0
25
15764
50 75 100 125 150 175
Tj - Junction Temperature ( °C )
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
3.0
VR = VRRM
2.5
half sinewave
2.0
RthJA = 45 K/W
l =10 mm
1.5
1.0
0.5
RthJA = 100 K/W
PCB: d = 25 mm
0.0
0
15763_1
20 40 60 80 100 120 140 160 180
Tamb - Ambient Temperature (°C)
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
1000
100
VR = VRRM
10
1
0.1
25
15765
50 75 100 125 150 175
Tj - Junction Temperature ( °C )
Fig. 2 - Max. Reverse Current vs. Junction Temperature
100
Tj = 175 °C
10
Tj = 25 °C
1
0.1
0.01
0.001
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
15762
VF - Forward Voltage ( V )
Fig. 4 - Max. Forward Current vs. Forward Voltage
Document Number: 86000 For technical questions within your region, please contact one of the following:
Rev. 1.6, 25-Aug-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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