MCLK
MCLKD2
TSCTL
MEMCSO
ADDRESS
DATA
RWR
tPLH1
tPLH2
tIOHL1
THMC1 THMC2
tHLZ2
tSHL1
tOOZL1 tPW1
tHLZ1
SYMBOL
tSHL12
tOOZL11,2
tHLZ1
tHLZ2
tPW1
tPLH1 1
tPLH2
tIOHL1 1
PARAMETER
MIN
MAX
ADDRESS valid to RWR↓
RWR↓ to DATA valid NON-RAD
RAD
RWR↑ to DATA High Impedance
(ADDRESS setup) THMC2-10 THMC2+5
0
30
-5
30
(DATA hold)
THMC1-10 THMC1+10
RWR↑ to ADDRESS High Impedance (ADDRESS hold) THMC1-10 THMC1+10
RWR↓ to RWR↑
MCLK-10 MCLK+5
MCLK↑ to MCLKD2↑
0
40
MCLK↑ to TSCTL/MEMCSO↓
0
40
MCLK↑ to RWR↓
0
60
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
Note:
1. Guaranteed by test
2. Pre- and Post-Irradiation Limits.
Figure 28. BCRTM DMA Write Timing (One-Word Write)
BCRTM-45