LZ402 View Datasheet(PDF) - Polyfet RF Devices

Part Name

Description

Manufacturer

LZ402

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Polyfet RF Devices 

polyfet rf devices

LZ402

General Description

Silicon VDMOS and LDMOS

transistors designed specifically

for broadband RF applications.

Suitable for Military Radios,

Cellular and Paging Amplifier Base

Stations, Broadcast FM/AM, MRI,

Laser Driver and others.

"Polyfet"TM process features

low feedback and output capacitances,

resulting in high Ft transistors with high

input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE

RF POWER LDMOS TRANSISTOR

125.0 Watts Single Ended

Package Style LZ

HIGH EFFICIENCY, LINEAR

HIGH GAIN, LOW NOISE

ROHS COMPLIANT

Total

Device

Dissipation

230 Watts

Junction to

Case Thermal

Resistance

o

0.75 C/W

ABSOLUTE MAXIMUM RATINGS ( T = 25 oC )

Maximum

Junction

Temperature

Storage

Temperature

DC Drain

Current

Drain to

Gate

Voltage

200 oC

o

o

-65 C to 150 C

13.5 A

70 V

Drain to

Source

Voltage

70 V

Gate to

Source

Voltage

20 V

RF CHARACTERISTICS ( 125.0 WATTS OUTPUT )

SYMBOL PARAMETER

MIN

TYP MAX UNITS TEST CONDITIONS

Gps

Common Source Power Gain

η

Drain Efficiency

12

60

dB Idq = 0.60 A, Vds = 28.0 V, F = 500 MHz

% Idq = 0.60 A, Vds = 28.0 V, F = 500 MHz

VSWR Load Mismatch Tolerance

10:1 Relative Idq = 0.60 A, Vds = 28.0 V, F = 500 MHz

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

SYMBOL PARAMETER

MIN

TYP MAX UNITS TEST CONDITIONS

Bvdss

Idss

Drain Breakdown Voltage

Zero Bias Drain Current

65

V

Ids = 50.00 mA, Vgs = 0V

2.0 mA

Vds = 28.0 V, Vgs = 0V

Igss

Gate Leakage Current

1

uA

Vds = 0V Vgs = 30V

Vgs

Gate Bias for Drain Current

2

5

V

Ids = 0.30 A, Vgs = Vds

gM

Forward Transconductance

5.4

Mho

Vds = 10V, Vgs = 5V

Rdson Saturation Resistance

0.17

Ohm

Vgs = 20V, Ids =16.00 A

Idsat

Saturation Current

34.00

Amp

Vgs = 20V, Vds = 10V

Ciss

Common Source Input Capacitance

160.0

pF

Vds = 28.0 Vgs = 0V, F = 1 MHz

Crss

Common Source Feedback Capacitance

8.0

pF

Vds = 28.0 Vgs = 0V, F = 1 MHz

Coss Common Source Output Capacitance

100.0

pF

Vds = 28.0 Vgs = 0V, F = 1 MHz

POLYFET RF DEVICES

REVISION 10/01/2007

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com

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